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| RB055LA-40 Diodes Schottky barrier diode RB055LA-40 Applications General rectification Features 1) Small power mold type (PMDT) 2) Low VF 3) High reliability External dimensions (Unit : mm) 2.60.2 0.20.15 0.1 Land size figure (Unit : mm) 2.0 1.4 3.80.2 4.70.3 PMD Structure Silicon epitaxial planar Structure 1.50.2 0.950.1 ROHM : PMD Manufacture Date Taping dimensions (Unit : mm) 2.00.05 4.00.1 1.750.1 1.550.1 0 0.250.05 1.4 5.50.05 12.00.2 1.550.1 0 2.70.1 4.00.1 1.250.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Limits Symbol VRM 40 VR 40 3 Io IFSM 70 150 Tj -55 to +150 Tstg (*1)Tc=80max Mounted on epoxy board. 160Half sine wave Electrical characteristic (Ta=25C) 5.00.1 Unit V V A A Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - Typ. - Max. 0.55 0.62 100 Unit V V A Conditions IF=1.5A IF=3.0A VR=40V 5.00.1 4.4 1/3 RB055LA-40 Diodes Electrical characteristic curves Ta=150 10000 Ta=150 10000 1000 Ta=75 Ta=125 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75 100 Ta=-25 Ta=25 100 Ta=25 10 1 0.1 0.01 0.001 Ta=-25 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=125 100 10 10 1 0.1 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 700 1 0 10 20 30 40 0 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 580 100 400 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 VR=40V n=30pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 570 Ta=25 IF=3A n=30pcs 90 80 70 60 50 40 30 20 10 AVE:6.01uA 390 380 370 360 350 340 330 320 310 300 AVE:333.1pF Ta=25 f=1MHz VR=0V n=10pcs 560 550 AVE:559.1mV 540 530 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=20pcs Ifsm 8.3ms 8.3ms 1cyc 100 15 10 AVE:117.2A 50 0 5 AVE:4.43ns 0 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 1000 1000 4.0 Mounted on epoxy board TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t Rth(j-a) 100 3.5 3.0 D=1/2 DC FORWARD POWER DISSIPATION:Pf(W) 2.5 2.0 1.5 1.0 0.5 0.0 Sin(180) 100 10 IM=100mA Rth(j-c) IF=A 1 1ms tim 300us 0.1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2/3 RB055LA-40 Diodes 1.4 5 4.5 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 25 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.2 0A 0V t DC Io VR D=t/T VR=20V T Tj=150 Sin(180) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 D=1/2 DC Sin(180) REVERSE POWER DISSIPATION:PR (W) 1 0.8 0.6 0.4 0.2 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC D=1/2 D=1/2 0A 0V t Io VR D=t/T VR=20V T Tj=150 150 Sin(180) 40 75 100 125 150 0 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 AVE:11.5kV 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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